BUZ71S2 - Siemens Semiconductor Group

BUZ71S2 Power Transistor

BUZ 71 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 S2 VDS 60 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1316-A9 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC .

Features

unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 3 0.1 10 10 0.08 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.1 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 9 A Semiconductor Group 2 07/96 BUZ 71 S2 Not for new design Electrical Characteristics, at Tj =.