BUZ70L - Siemens Semiconductor Group

BUZ70L Power Transistor

BUZ 70 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 70 L Pin 2 D Pin 3 S VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1325-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C .

Features

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.6 0.1 10 10 0.12 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.15 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 6 A Semiconductor Group 2 07/96 BUZ 70 L Electrical Characteristics, at Tj = 25°.