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·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and.
℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW89 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current IC= 15A; IB= 1.5A VCB.
BUW89 - SGS-THOMSON
The BUW89 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency a.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW81 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | BUW81A |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BUW84 |
NXP |
Silicon diffused power transistors |
|
| 4 | BUW85 |
NXP |
Silicon diffused power transistors |
|
| 5 | BUW86 |
INCHANGE |
NPN Transistor |
|
| 6 | BUW87 |
INCHANGE |
NPN Transistor |
|
| 7 | BUW87A |
INCHANGE |
NPN Transistor |
|
| 8 | BUW1015 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 9 | BUW11 |
INCHANGE |
NPN Transistor |
|
| 10 | BUW11 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | BUW11A |
INCHANGE |
NPN Transistor |
|
| 12 | BUW11A |
SavantIC |
SILICON POWER TRANSISTOR |
|