High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems • Switching applications. ok, halfpage BUW84; BUW85 PINNING PIN 1 2 3 base collector; connected to mounting base emitter DESCRIPTION 2 1 3 MBB008 1 2 3 MBK107 Fig.1 Simplified outlin.
tive load; see Fig.11 open base − − − − − − 0.4 400 450 1 2 3 50 − V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 − − 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistance from junction to mounting base thermal resistance from junction to ambient in free air VALUE 2.1 100 UNIT K/W K/W 1997 Aug 14 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUW84 BUW85 VCEO collector-emitter voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUW81 |
Seme LAB |
Bipolar NPN Device | |
2 | BUW81A |
Seme LAB |
Bipolar NPN Device | |
3 | BUW85 |
NXP |
Silicon diffused power transistors | |
4 | BUW86 |
INCHANGE |
NPN Transistor | |
5 | BUW87 |
INCHANGE |
NPN Transistor | |
6 | BUW87A |
INCHANGE |
NPN Transistor | |
7 | BUW89 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | BUW89 |
SGS-THOMSON |
HIGH POWER NPN SILICON TRANSISTOR | |
9 | BUW1015 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
10 | BUW11 |
INCHANGE |
NPN Transistor | |
11 | BUW11 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | BUW11A |
INCHANGE |
NPN Transistor |