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·With TO-3PN package www.datasheet4u.com ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW11 BUW11A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUW11 BU.
Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW11 IC=0.1A ; IB=0; L=25mH BUW11A BUW11 BUW11A BUW11 BUW11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11 BUW11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.4 IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off c.
BUW11A - INCHANGE
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW11 |
INCHANGE |
NPN Transistor |
|
| 2 | BUW11 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUW11AF |
NXP |
Silicon diffused power transistors |
|
| 4 | BUW11AF |
INCHANGE |
NPN Transistor |
|
| 5 | BUW11AF |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BUW11AW |
NXP |
Silicon diffused power transistors |
|
| 7 | BUW11AW |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUW11F |
NXP |
Silicon diffused power transistors |
|
| 9 | BUW11F |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BUW11F |
INCHANGE |
NPN Transistor |
|
| 11 | BUW11W |
NXP |
Silicon diffused power transistors |
|
| 12 | BUW11W |
INCHANGE |
NPN Transistor |
|