The BUW1015 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB IBM Ptot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B.
nction-case Max 0.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min. Typ. Max. 0.2 2 100 Unit mA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUW11 |
INCHANGE |
NPN Transistor | |
2 | BUW11 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BUW11A |
INCHANGE |
NPN Transistor | |
4 | BUW11A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | BUW11AF |
NXP |
Silicon diffused power transistors | |
6 | BUW11AF |
INCHANGE |
NPN Transistor | |
7 | BUW11AF |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | BUW11AW |
NXP |
Silicon diffused power transistors | |
9 | BUW11AW |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUW11F |
NXP |
Silicon diffused power transistors | |
11 | BUW11F |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | BUW11F |
INCHANGE |
NPN Transistor |