BUW86 - INCHANGE

BUW86 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Col.

Features

d trademark isc Silicon NPN Power Transistor BUW86 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.65 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A ICBO Collector-Base Cutoff Current VCB= VCBO; IE= 0 VCB= VCBO; IE= 0;TJ= 150℃ hFE DC Current Gain IC= 5A; VCE= 5V 20 1.6 V 1 2 mA fT Current-G.