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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL .
Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 1A VCE=VCES ;VBE= 0 VCE=VCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V BUW12AW MIN TYP. MAX UNIT 450 V 1.5 V 1.5 V 1.0 3.0 mA 10 mA 10 35 10 35 NOTICE： ISC r.
BUW12AW - NXP
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverte.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW12A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BUW12A |
INCHANGE |
NPN Transistor |
|
| 3 | BUW12AF |
NXP |
Silicon diffused power transistors |
|
| 4 | BUW12AF |
NXP |
Silicon diffused power transistors |
|
| 5 | BUW12AF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BUW12 |
INCHANGE |
NPN Transistor |
|
| 7 | BUW12 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | BUW1215 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 9 | BUW12F |
NXP |
Silicon diffused power transistors |
|
| 10 | BUW12F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | BUW12W |
NXP |
Silicon diffused power transistors |
|
| 12 | BUW12W |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|