BUW12 - INCHANGE

BUW12 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL .

Features

er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 6A; IB= 1.2A VCE=VCES ;VBE= 0 VCE=VCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V Switching Times; Resistive Load ton Turn-on Time ts Storage Time IC= 6A;IB1= -IB2= 1.2A tf Fall.