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High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated 1 Front view ook, halfpage BUW12F; BUW12AF handbook, halfpage 2 1 MBB008 3 2 3 MSB012 Fig.
5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System .
BUW12F - Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW12 |
INCHANGE |
NPN Transistor |
|
| 2 | BUW12 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUW1215 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 4 | BUW12A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BUW12A |
INCHANGE |
NPN Transistor |
|
| 6 | BUW12AF |
NXP |
Silicon diffused power transistors |
|
| 7 | BUW12AF |
NXP |
Silicon diffused power transistors |
|
| 8 | BUW12AF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | BUW12AW |
NXP |
Silicon diffused power transistors |
|
| 10 | BUW12AW |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | BUW12W |
NXP |
Silicon diffused power transistors |
|
| 12 | BUW12W |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|