High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated 1 Front view ook, halfpage BUW12F; BUW12AF handbook, halfpage 2 1 MBB008 3 2 3 MSB012 Fig.
5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System .
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverte.
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUW12A |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | BUW12A |
INCHANGE |
NPN Transistor | |
3 | BUW12AW |
NXP |
Silicon diffused power transistors | |
4 | BUW12AW |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | BUW12 |
INCHANGE |
NPN Transistor | |
6 | BUW12 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | BUW1215 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
8 | BUW12F |
NXP |
Silicon diffused power transistors | |
9 | BUW12F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUW12W |
NXP |
Silicon diffused power transistors | |
11 | BUW12W |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | BUW1015 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |