BSP171P - Siemens Semiconductor Group

BSP171P SIPMOS Power Transistor

BSP 171 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Pin 1 G Type BSP 171 P VDS -60 V ID RDS(on) Pin2/4 D Pin 3 S -1.8 A 0.3 Ω Package Ordering Code @ VGS VGS = -10 V P-SOT223-4-1 Q67041-S4019 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuo.

Features

171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4) Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling areaF) RthJS RthJA RthJA tbd tbd 70 Symbol min. Values typ. tbd max. tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = -40 °C VDS = -60 V, VGS = 0 V, Tj = .