BSP170 - Siemens Semiconductor Group

BSP170 SIPMOS Small-Signal Transistor

BSP 170 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS(th) = -2.1...-4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 170 Type BSP 170 VDS -60 V ID -1.7 A RDS(on) 0.35 Ω Package SOT-223 Marking Ordering Code Q67000-S . . . Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symb.

Features

b 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -3 -0.1 -10 -10 0.255 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.35 VGS = -20 V, VDS = 0 V Drain-Source on-state resist.