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BSP16T1G High Voltage Transistors PNP Silicon Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25C (Note 1) VCEO VCBO VEBO IC PD --300 --350 --6.0 --100 1.
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25C
(Note 1)
VCEO VCBO VEBO
IC PD
--300 --350 --6.0 --100 1.5
Vdc Vdc Vdc mAdc W
Storage Temperature Range
PD
--65 to
C
+150
Junction Temperature
TJ 150 C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction--to--Ambient
RθJA
83.3 C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Rat.
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|---|---|---|---|---|
| 1 | BSP16T1 |
Motorola Inc |
PNP SILICON HIGH VOLTAGE TRANSISTOR |
|
| 2 | BSP16T1 |
ON Semiconductor |
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|
| 3 | BSP16 |
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| 4 | BSP16 |
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PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
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| 5 | BSP100 |
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| 6 | BSP100 |
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N-channel enhancement mode TrenchMOS transistor |
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| 7 | BSP106 |
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| 8 | BSP107 |
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N-channel enhancement mode vertical D-MOS transistor |
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| 9 | BSP108 |
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| 10 | BSP110 |
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| 11 | BSP120 |
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| 12 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|