BSM25GB120DN2 - Siemens Semiconductor Group

BSM25GB120DN2 IGBT

BSM 25 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 25 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67076-A2109-A70 1200V 38A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RG.

Features

25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.5 2 6.5 3 3.7 V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C Zero gate voltage collector current ICES 0.8 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 180 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 10 1.65 0.25 0.11 - S nF - VCE = 20 V, IC = 25 A Input .