www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward curren.
selrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF I FRM I 2t 25 50 125 A A A2s Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C TC = 80 °C VCES I C,nom. IC I CRM Ptot VGES 1200 25 45 50 230 +/- 20V V A A A W V DataSheet4U.com DataSh ee Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM25GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM25GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM25GD100D |
Siemens |
IGBT MODULE | |
4 | BSM25GD120D2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM25GD120DLCE3224 |
eupec GmbH |
IGBT-Module | |
6 | BSM25GD120DN2 |
Eupec |
IGBT POWER MODULE | |
7 | BSM25GD120DN2 |
Infineon Technologies |
IGBT POWER MODULE | |
8 | BSM250D17P2E004 |
ROHM |
SiC Power Module | |
9 | BSM254F |
Siemens |
TRANSISTOR | |
10 | BSM200GA100D |
Infineon Technologies |
IGBT Module | |
11 | BSM200GA120D |
Infineon Technologies |
IGBT Module | |
12 | BSM200GA120DL |
Eupec GmbH |
IGBT Power Module |