SiC Power Module BSM250D17P2E004 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge m.
1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. 1/10 19.Oct.2018 - Rev.001 BSM250D17P2E004 Datasheet Absolute maximum ratings (Tj = 25°C) Parameter Symbol Conditions Drain - Source Voltage VDSS G-S short Gate - Source Voltage (+) VGSS D-S short Gate - Source Voltage (-) G - S Voltage (tsurge<300nsec) D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM254F |
Siemens |
TRANSISTOR | |
2 | BSM25GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM25GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM25GD100D |
Siemens |
IGBT MODULE | |
5 | BSM25GD120D2 |
Siemens Semiconductor Group |
IGBT | |
6 | BSM25GD120DLCE3224 |
eupec GmbH |
IGBT-Module | |
7 | BSM25GD120DN2 |
Eupec |
IGBT POWER MODULE | |
8 | BSM25GD120DN2 |
Infineon Technologies |
IGBT POWER MODULE | |
9 | BSM25GP120 |
Eupec |
TRANSISTOR | |
10 | BSM200GA100D |
Infineon Technologies |
IGBT Module | |
11 | BSM200GA120D |
Infineon Technologies |
IGBT Module | |
12 | BSM200GA120DL |
Eupec GmbH |
IGBT Power Module |