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BSM25GB120DN2 |
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| Part Number | BSM25GB120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 25 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 25 GB 120 DN2 Maximum Ratings Parameter Collector-emitter ... |
| Features |
25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.5 2 6.5 3 3.7
V
VGE = VCE, IC = 1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.8 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
180
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
10 1.65 0.25 0.11 -
S nF -
VCE = 20 V, IC = 25 A
Input ... |
| Document |
 BSM25GB120DN2 Data Sheet
PDF 111.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSM25GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM25GD100D |
Siemens |
IGBT MODULE |
|
| 3 | BSM25GD120D2 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BSM25GD120DLCE3224 |
eupec GmbH |
IGBT-Module |
|
| 5 | BSM25GD120DN2 |
Eupec |
IGBT POWER MODULE |
|