BSM10GD60DN2 - Siemens Semiconductor Group

BSM10GD60DN2 IGBT

BSM 10 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V VCE 600V IC 10A Package ECONOPACK 1 Ordering Code C67076-A2508-A67 VCE VCGR VG.

Features

otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C Zero gate voltage collector current ICES 1 mA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 3 570 80 50 - S pF - VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output.