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BSM10GD60DN2 |
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| Part Number | BSM10GD60DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 10 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 60 DN2 Maximum Ratings Parameter C... |
| Features |
otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 6.5 2.7 2.8
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1
mA nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
3 570 80 50 -
S pF -
VCE = 20 V, IC = 10 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output... |
| Document |
 BSM10GD60DN2 Data Sheet
PDF 122.39KB |
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|---|---|---|---|---|
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