BSC0911ND - Infineon

BSC0911ND Dual N-Channel OptiMOS MOSFET

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • N-channel ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 V.

Features

Product Summary
• Dual N-channel OptiMOS™ MOSFET
• Optimized for high performance Buck converter
• Logic level (4.5V rated) VDS RDS(on),max
• N-channel ID
• Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 VPhase BSC0911ND Q1 Q2 25 25 V 3.2 1.2 mW 4.8 1.7 40 40 A Type BSC0911ND Package PG-TISON-8 Marking 0911ND Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current Pulsed drain current5) Avalanche energy, single puls.