270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 2400 28 80 17.7 30.
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF8G22LS-270GV |
Ampleon |
Power LDMOS transistor | |
2 | BLF8G22LS-270V |
Ampleon |
Power LDMOS transistor | |
3 | BLF8G22LS-200GV |
Ampleon |
Power LDMOS transistor | |
4 | BLF8G22LS-200V |
Ampleon |
Power LDMOS transistor | |
5 | BLF8G22LS-205V |
Ampleon |
Power LDMOS transistor | |
6 | BLF8G22LS-220 |
Ampleon |
Power LDMOS transistor | |
7 | BLF8G22LS-240 |
Ampleon |
Power LDMOS transistor | |
8 | BLF8G22LS-140 |
Ampleon |
Power LDMOS transistor | |
9 | BLF8G22LS-160BV |
Ampleon |
Power LDMOS transistor | |
10 | BLF8G20LS-160V |
Ampleon |
Power LDMOS transistor | |
11 | BLF8G20LS-220 |
Ampleon |
Power LDMOS transistor | |
12 | BLF8G20LS-230V |
Ampleon |
Power LDMOS transistor |