BLF8G22LS-200V - Ampleon

BLF8G22LS-200V Power LDMOS transistor

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB).

Features

 Excellent ruggedness
 High efficiency
 Low Rth providing excellent thermal stability
 Designed for broadband operation
 Decoupling leads to enable improved video bandwidth (80 MHz typical)
 Lower output capacitance for improved performance in Doherty applications
 D.