160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805.
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF8G20LS-220 |
Ampleon |
Power LDMOS transistor | |
2 | BLF8G20LS-230V |
Ampleon |
Power LDMOS transistor | |
3 | BLF8G20LS-400PGV |
Ampleon |
Power LDMOS transistor | |
4 | BLF8G20LS-400PV |
Ampleon |
Power LDMOS transistor | |
5 | BLF8G22LS-140 |
Ampleon |
Power LDMOS transistor | |
6 | BLF8G22LS-160BV |
Ampleon |
Power LDMOS transistor | |
7 | BLF8G22LS-200GV |
Ampleon |
Power LDMOS transistor | |
8 | BLF8G22LS-200V |
Ampleon |
Power LDMOS transistor | |
9 | BLF8G22LS-205V |
Ampleon |
Power LDMOS transistor | |
10 | BLF8G22LS-220 |
Ampleon |
Power LDMOS transistor | |
11 | BLF8G22LS-240 |
Ampleon |
Power LDMOS transistor | |
12 | BLF8G22LS-270 |
Ampleon |
Power LDMOS transistor |