BLF8G22LS-205V - Ampleon

BLF8G22LS-205V Power LDMOS transistor

205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 211.

Features

 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 In.