200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB).
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Lower output capacitance for improved performance in Doherty applications
D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF8G22LS-200V |
Ampleon |
Power LDMOS transistor | |
2 | BLF8G22LS-205V |
Ampleon |
Power LDMOS transistor | |
3 | BLF8G22LS-220 |
Ampleon |
Power LDMOS transistor | |
4 | BLF8G22LS-240 |
Ampleon |
Power LDMOS transistor | |
5 | BLF8G22LS-270 |
Ampleon |
Power LDMOS transistor | |
6 | BLF8G22LS-270GV |
Ampleon |
Power LDMOS transistor | |
7 | BLF8G22LS-270V |
Ampleon |
Power LDMOS transistor | |
8 | BLF8G22LS-140 |
Ampleon |
Power LDMOS transistor | |
9 | BLF8G22LS-160BV |
Ampleon |
Power LDMOS transistor | |
10 | BLF8G20LS-160V |
Ampleon |
Power LDMOS transistor | |
11 | BLF8G20LS-220 |
Ampleon |
Power LDMOS transistor | |
12 | BLF8G20LS-230V |
Ampleon |
Power LDMOS transistor |