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12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB pro.
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequ.
BLF25M612G - NXP
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF25M612 |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF25M612 |
NXP |
Power LDMOS transistor |
|
| 3 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS |
|
| 4 | BLF202 |
NXP |
HF/VHF power MOS transistor |
|
| 5 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor |
|
| 6 | BLF2022-125 |
NXP |
UHF power LDMOS transistor |
|
| 7 | BLF2022-30 |
NXP |
UHF power LDMOS transistor |
|
| 8 | BLF2022-40 |
NXP |
UHF power LDMOS transistor |
|
| 9 | BLF2022-70 |
NXP |
UHF power LDMOS transistor |
|
| 10 | BLF2022-90 |
NXP |
UHF power LDMOS transistor |
|
| 11 | BLF2043 |
NXP |
UHF power LDMOS transistor |
|
| 12 | BLF2043F |
Philips |
UHF power LDMOS transistor |
|