BLF245 - NXP

BLF245 VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4.

Features

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch. g MBB072 BLF245 PIN CONFIGURATION lfpage 1 4 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION 2 3 MSB057 Fig.1 .