250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tc.
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1..
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2425M7L100 |
Ampleon |
Power LDMOS transistor | |
2 | BLF2425M7L100 |
NXP |
Power LDMOS transistor | |
3 | BLF2425M7L140 |
Ampleon |
Power LDMOS transistor | |
4 | BLF2425M7L140 |
NXP |
Power LDMOS transistor | |
5 | BLF2425M7LS100 |
Ampleon |
Power LDMOS transistor | |
6 | BLF2425M7LS100 |
NXP |
Power LDMOS transistor | |
7 | BLF2425M7LS140 |
Ampleon |
Power LDMOS transistor | |
8 | BLF2425M7LS140 |
NXP |
Power LDMOS transistor | |
9 | BLF2425M7LS250P |
Ampleon |
Power LDMOS transistor | |
10 | BLF2425M7LS250P |
NXP |
Power LDMOS transistor | |
11 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor | |
12 | BLF2425M6L180P |
NXP |
Power LDMOS transistor |