The ASI BLF242 is intended for use in 28 VDC large signal Applications. FEATURES INCLUDE: • PG = 16 dB Typical at 175 MHz • Omnigold™ Metalization System • Class-B MAXIMUM RATINGS ID 1.0 A VDS 65 V VGS ±20 V PDISS 16 W @ TMB ≤ 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 11 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A SD Ø.125 NOM. .
INCLUDE:
• PG = 16 dB Typical at 175 MHz
• Omnigold™ Metalization System
• Class-B
MAXIMUM RATINGS
ID 1.0 A
VDS 65 V
VGS ±20 V
PDISS
16 W @ TMB ≤ 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 11 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45° B
A
SD
Ø.125 NOM. FULL R
J .125
GS
C D
E F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59 B .785 / 19.94 C .720 / 18.29 D .970 / 24.64 E F .004 / 0.10 G .085 / 2.16 H .160 / 4.06 I J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
CHARACTERIST.
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the H.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor | |
2 | BLF2425M6L180P |
NXP |
Power LDMOS transistor | |
3 | BLF2425M6LS180P |
Ampleon |
Power LDMOS transistor | |
4 | BLF2425M6LS180P |
NXP |
Power LDMOS transistor | |
5 | BLF2425M7L100 |
Ampleon |
Power LDMOS transistor | |
6 | BLF2425M7L100 |
NXP |
Power LDMOS transistor | |
7 | BLF2425M7L140 |
Ampleon |
Power LDMOS transistor | |
8 | BLF2425M7L140 |
NXP |
Power LDMOS transistor | |
9 | BLF2425M7L250P |
Ampleon |
Power LDMOS transistor | |
10 | BLF2425M7L250P |
NXP |
Power LDMOS transistor | |
11 | BLF2425M7LS100 |
Ampleon |
Power LDMOS transistor | |
12 | BLF2425M7LS100 |
NXP |
Power LDMOS transistor |