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BLF245 |
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| Part Number | BLF245 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envel... |
| Features |
• High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. g MBB072 BLF245 PIN CONFIGURATION lfpage 1 4 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION 2 3 MSB057 Fig.1 ... |
| Document |
 BLF245 Data Sheet
PDF 91.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF242 |
NXP |
HF/VHF power MOS transistor |
|
| 2 | BLF242 |
ASI |
HF-VHF POWER MOSFET |
|
| 3 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF2425M6L180P |
NXP |
Power LDMOS transistor |
|
| 5 | BLF2425M6LS180P |
Ampleon |
Power LDMOS transistor |
|