BLF2425M6L180P - NXP

BLF2425M6L180P Power LDMOS transistor

180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.2 Fea.

Features

 Easy power control
 Integrated ESD protection
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating. NXP Semiconductors BLF2425M6L(S)180P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF2425M6L180P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2.