BLF189XRBS - Ampleon

BLF189XRBS Power LDMOS transistor

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complet.

Features

 Easy power control
 Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
 Excellent ruggedness VSWR > 65 : 1
 High efficiency
 Excellent thermal stability
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Industrial, scientific and medical applications BLF189XRB; BLF189XRBS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF189XRB (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF189XRBS (SOT539B) 1 drain1 2 drain2 3 gate1.