BLF189XRAS - Ampleon

BLF189XRAS Power LDMOS transistor

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1700 Gp (dB) 26.2 D (%) 74 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection  Excellent ruggedness  High .

Features

 Easy power control
 Integrated dual sided ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications BLF189XRA; BLF189XRAS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF189XRA (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF189XRAS (SOT539B) 1 drain.