BLF1820-70 - NXP

BLF1820-70 UHF power LDMOS transistor

1 3 MBK394 APPLICATIONS • RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPER.

Features

• Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
  – Output power = 65 W (PEP)
  – Gain = 12 dB
  – Efficiency = 32%
  – dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (1800 to 2000 MHz)
• Internally matched for ease of use. Top view 2 handbook, halfpage BLF1820-70 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS
• RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency ra.