BLF1820-40 - Philips

BLF1820-40 UHF power LDMOS transistor

drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT608A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common .

Features

• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (1.8 to 2 GHz)
• Internal input and output matching for high gain and efficiency
• Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS
• Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range
• Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flang.