BLF182XR - NXP

BLF182XR Power LDMOS transistor

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Ex.

Features

 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications NXP Semiconductors BLF182XR; BLF182XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF182XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF182XRS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 .