A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 88 to 108 pulsed RF 30 to 512 CW 30 to 512 VDS (V) 50 50 50 35 PL (W) 350 388 400 193 Gp (dB) 28 26 15 14 D (%) 75 80 48 47 1.2 Features and benefits Easy .
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description BLF183XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF183XRS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 .
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Ta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF183XR |
Ampleon |
Power LDMOS transistor | |
2 | BLF183XR |
NXP |
Power LDMOS transistor | |
3 | BLF1820-40 |
Philips |
UHF power LDMOS transistor | |
4 | BLF1820-70 |
NXP |
UHF power LDMOS transistor | |
5 | BLF1820-90 |
Philips |
UHF power LDMOS transistor | |
6 | BLF182XR |
Ampleon |
Power LDMOS transistor | |
7 | BLF182XR |
NXP |
Power LDMOS transistor | |
8 | BLF182XRS |
Ampleon |
Power LDMOS transistor | |
9 | BLF182XRS |
NXP |
Power LDMOS transistor | |
10 | BLF184XR |
Ampleon |
Power LDMOS transistor | |
11 | BLF184XR |
NXP |
Power LDMOS transistor | |
12 | BLF184XRG |
Ampleon |
Power LDMOS transistor |