BLF1820-40 |
Part Number | BLF1820-40 |
Manufacturer | Philips |
Description | drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a cerami... |
Features |
• High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range • Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flang... |
Document |
BLF1820-40 Data Sheet
PDF 155.40KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF1820-70 |
NXP |
UHF power LDMOS transistor | |
2 | BLF1820-90 |
Philips |
UHF power LDMOS transistor | |
3 | BLF182XR |
Ampleon |
Power LDMOS transistor | |
4 | BLF182XR |
NXP |
Power LDMOS transistor | |
5 | BLF182XRS |
Ampleon |
Power LDMOS transistor |