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Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC.
unction - soldering point1) Symbol RthJS 1 Value 2.5 2.4 10 10 1 50 5 120 150 -55 ... 150 Unit V mA mW °C Value 430 Unit K/W 2013-09-19 BFP520F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured V(BR)CEO 2.5 3 3.5 V ICES - - 10 µA ICBO - - 200 m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP520 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP520 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP521 |
UNITRA |
NPN Transistor |
|
| 4 | BFP519 |
UNITRA |
NPN Transistor |
|
| 5 | BFP540 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 6 | BFP540ESD |
Infineon |
Low Noise Silicon Bipolar RF Transistor |
|
| 7 | BFP540F |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 8 | BFP540FESD |
Infineon Technologies |
Low profile robust silicon NPN RF bipolar transistor |
|
| 9 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|
| 10 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 11 | BFP136 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 12 | BFP136W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|