BFP136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES .
Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz Colle.
BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP136 |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
3 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise | |
4 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
6 | BFP180W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
7 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
8 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
9 | BFP181R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
10 | BFP181R |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
11 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
12 | BFP181TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |