BFP540ESD - Infineon

BFP540ESD Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFP540ESD .

Features

250 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured V(BR)CEO 4.5 5 -V ICES - - 1.