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The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance. It remains cost competitive without compromising on ease of use. Featu.
DAB/DMB and FM/AM radio
• LNAs for wireless communications such as cordless phones
Device information
Table 1
Part information
Product name / Ordering code
Package Pin configuration
Marking
BFP540FESD / BFP540FESDH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E AUs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Pieces / Reel 3000
Datasheet
Please read the sections "Important notice" and "Warnings" at the end of this document
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Revision 3.0 2024-07-01
BFP540FESD
Low profile robust silicon NPN RF bipolar transistor Table of content.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP540F |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 2 | BFP540 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP540ESD |
Infineon |
Low Noise Silicon Bipolar RF Transistor |
|
| 4 | BFP519 |
UNITRA |
NPN Transistor |
|
| 5 | BFP520 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 6 | BFP520 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 7 | BFP520F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 8 | BFP521 |
UNITRA |
NPN Transistor |
|
| 9 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|
| 10 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 11 | BFP136 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 12 | BFP136W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|