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BFP520F |
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| Part Number | BFP520F |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz •... |
| Features |
unction - soldering point1)
Symbol
RthJS 1
Value
2.5 2.4 10 10 1 50 5 120
150 -55 ... 150
Unit V
mA mW °C
Value 430
Unit K/W 2013-09-19
BFP520F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured
V(BR)CEO 2.5 3 3.5 V
ICES
- - 10 µA
ICBO
- - 200 m... |
| Document |
 BFP520F Data Sheet
PDF 526.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP520 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP520 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP521 |
UNITRA |
NPN Transistor |
|
| 4 | BFP519 |
UNITRA |
NPN Transistor |
|
| 5 | BFP540 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|