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BFP196W - Siemens Semiconductor Group

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BFP196W NPN Silicon RF Transistor

BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering .

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6 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC .

The same part from a different manufacturer

Datasheet BFP196W - Infineon Technologies AG BFP196W

Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunic.

Datasheet BFP196W - INCHANGE BFP196W

·Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ·High Gain ︱S21︱2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f .

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