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BFP196W |
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| Part Number | BFP196W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier... |
| Features |
6
BFP 196W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 50 mA, VCE = 8 V
Semiconductor Group
2
Dec-12-1996
BFP 196W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC ... |
| Document |
 BFP196W Data Sheet
PDF 60.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP196 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP196W |
INCHANGE |
NPN Transistor |
|
| 4 | BFP196W |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 5 | BFP193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|