PNP Silicon RF Transistor For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA BFP 194 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP 194 RKs 1 = C 2 = E 3 = B 4 = E SOT-143 M.
l Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V V(BR)CEO 15 - -V ICBO - - 100 nA IEBO - - 1 µA hFE 15 50 -- 2 Oct-12-1999 BFP 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10.
PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP193 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP193T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
4 | BFP193TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
5 | BFP193TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
6 | BFP193W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
7 | BFP193W |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
8 | BFP196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFP196 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
10 | BFP196W |
INCHANGE |
NPN Transistor | |
11 | BFP196W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP196W |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |