BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter C.
acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFP 193W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.63 0.33 1.8 - GHz pF 0.9 dB 1.3 2.1 - IC.
Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP193 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP193T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
4 | BFP193TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
5 | BFP193TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
6 | BFP194 |
Infineon |
PNP Silicon RF Transistor | |
7 | BFP194 |
Siemens Semiconductor Group |
PNP Silicon RF Transistor | |
8 | BFP196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFP196 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
10 | BFP196W |
INCHANGE |
NPN Transistor | |
11 | BFP196W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP196W |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |