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BFP196W |
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| Part Number | BFP196W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power a... |
| Features |
V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
115 K/W
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04
BFP196W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE =... |
| Document |
 BFP196W Data Sheet
PDF 538.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP196 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP196W |
INCHANGE |
NPN Transistor |
|
| 4 | BFP196W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|