Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFP183W 3 4 2 1 ESD (Electrostatic discharge) sensitive devi.
the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-08 BFP183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - -.
BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP183 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP183 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP183R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
4 | BFP183R |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
5 | BFP183T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
6 | BFP183TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
7 | BFP183TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
8 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFP180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
10 | BFP180W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
11 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |